TPCA8006-H 2006-01-17 1 toshiba field effect transistor silicon n-channel mos type ( -mosvii) TPCA8006-H switching regulator applications motor drive applications dc dc converter applications ? small footprint due to a small and thin package ? high speed switching ? low drain-source on - resistance : r ds (on) = 41 m ? (typ.) (v g =10v, i d =9a) ? high forward transfer admittance: |y fs | = 15 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 100 v) ? enhancement mode: v th = 3.0 to 5.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 100 v drain-gate voltage (r gs = 20 k ? ) v dgr 100 v gate-source voltage v gss 20 v dc (note 1) i d 18 drain current pulsed (note 1) i dp 36 a drain power dissipation (tc=25 ) p d 45 w drain power dissipation (t = 10 s) (note 2a) p d 2.8 w drain power dissipation (t = 10 s) (note 2b) p d 1.6 w single-pulse avalanche energy (note 3) e as 224 mj avalanche current i ar 18 a repetitive avalanche energy (note 2a) (note 4) e ar 4.5 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 4, refer to the next page. this transistor is an electrostatic-sensitive device. handle with care. unit: mm 5.00.2 0.950.0 5 0.1660.0 5 s 0.05 s a 0.50.1 6.00.3 1.27 0.40.1 5.00.2 0.595 0.05 m a 1 4 5 8 0.150.05 0.80.1 1.10.2 4.250.2 0.60.1 3.50.2 1 4 5 8 jedec D jeita D toshiba 2-5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3 source 4 gate 5,6,7,8 drain
TPCA8006-H 2006-01-17 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to case (tc=25 ) r th (ch-c) 2.78 c/w thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 44.6 c/w thermal resistance, channel to ambient (t = 10 s) (note 2b) r th (ch-a) 78.1 c/w marking (note 5) note 1: the channel temperature should not exceed 150c during use. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 50 v t ch = 25c (initial) l = 0.8 mh r g = 25 ? i ar = 18 a note 4: repetitive rating: pulse width limited by max channel temperature note 5: (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) * weekly code: (three digits) week of manufacture (01 for first week of year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year) * type tpca 8006-h lot no.
TPCA8006-H 2006-01-17 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cutoff current i dss v ds = 100 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 100 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 3.0 ? 5.0 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 9 a ? 41 67 m ? forward transfer admittance |y fs | v ds = 10 v, i d = 9 a 7.5 15 ? s input capacitance c iss ? 780 ? reverse transfer capacitance c rss ? 17 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 390 ? pf rise time t r ? 3 ? turn-on time t on ? 13 ? fall time t f ? 2 ? switching time turn-off time t off duty < = = 10 s ? 13 ? ns total gate charge (gate-source plus gate-drain) q g ? 12 ? gate-source charge 1 q gs1 ? 5.6 ? gate-drain (?miller?) charge q gd ? 4.0 ? gate switch charge q sw v dd ? = 10 v, i d = 18 a ? 6.9 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse i drp ? ? ? 36 a forward voltage (diode) v dsf i dr = 18 a, v gs = 0 v ? ? ? 1.7 v r l = 5.6 ? v dd ? ? i d = 9 a v out
TPCA8006-H 2006-01-17 4 i d ? v gs drain current i d (a) gate-source voltage v gs (v) 0 40 8 24 16 32 2 0 10 4 6 8 v ds ? v gs drain-source voltage v ds (v) gate-source voltage v gs (v) 0 2 0.4 1.2 0.8 1.6 4 0 20 812 16 r ds (on) ? i d drain-source on-resistance r ds (on) ( ? ) drain current i d (a) 0.1 1 0.01 0.1 1 10 100 common source ta = 25c pulse test v gs = 10 v 100 25 ta = ? 55c common source v ds = 20 v pulse test common source ta = 25c pulse test i d = 18 a 9 4.5 i d ? v ds drain current i d (a) drain-source voltage v ds (v) 20 12 8 0 16 4 0 0.4 0.8 1.2 1.6 2 i d ? v ds drain current i d (a) drain-source voltage v ds (v) 40 30 20 10 0 50 0 4 10 8 6 2 10 9 8.5 8 7.5 7 6.5 common source ta = 25c pulse test common source ta = 25c pulse test 10 9 8.5 8 7.5 7 6.5 v gs = 6v v gs = 6v drain current i d (a) ? y fs ? ? i d forward transfer admittance |y fs | (s) common source v ds = 20 v pulse test 0.1 10 100 0.1 1 100 25 125 ta = ? 55c 10 1
TPCA8006-H 2006-01-17 5 ambient temperature ta (c) r ds (on) ? ta drain-source on-resistance r ds (on) ( ? ) 0 0.1 0.02 0.06 0.04 0.08 ? 40 ? 80 160 0 40 120 i d = 18 a 9 4.5 common source pulse test i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) 0.1 10 100 1 0 ? 0.2 ? 0.8 ? 1.0 ? 1.2 ? 0.4 v th ? ta gate threshold voltage v th (v) ambient temperature ta (c) 0 1 3 4 6 5 ? 80 ? 40 0 40 80 120 160 ? 0.6 2 common source v ds = 10 v i d = 1 ma pulse test capacitance ? v ds capacitance c (pf) drain-source voltage v ds (v) 1 100 1000 10000 0.1 1 10 100 10 c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c common source ta = 25c pulse test 10 5 3 1 v gs = 0 v 80 gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 20 16 12 8 4 0 0 0 4 8 16 20 20 40 60 80 100 12 v ds v dd = 80 v v gs common source i d = 18 a ta = 25c pulse test
TPCA8006-H 2006-01-17 6 p d ? tc drain power dissipation p d (w) case temperature tc (c) 50 40 30 20 10 0 0 40 80 120 160 p d ? ta drain power dissipation p d (w) ambient temperature ta (c) 3.0 2.0 0 1.5 2.5 1.0 0.5 0 40 80 120 160 (1) (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) 10s r th ? t w transient thermal impedance r th (c/w) pulse width t w (s) 1000 0.1 0.001 1000 0.01 1 10 100 1 100 (1) device mounted on a glass-epoxy board (a) (note2a) (2) device mounted on a glass-epoxy board (b) (note2b) (3) tc = 25c 10 0.1 (1) ( 2 ) (3) single - pulse drain current i d (a) drain-source voltage v ds (v) safe operating area 1000 0.1 1 10 100 *: single - pulse ta = 25c curves must be derated linearly with increase in temperature. 0.01 10 1 0.1 100 i d max (pulse) * i d max (continuous) t = 1ms * 10ms * (2) v dss max dc operation tc = 25c
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